A model for high-field conduction in SIMOX buried oxides

High-field electrical conduction through SIMOX buried oxide exhibits distinctly different characteristics from thermal SiO/sub 2/. A quantitative model for high-field SIMOX BOX conduction is proposed which provides an explanation for both the earlier onset of BOX Fowler-Nordheim tunneling current as...

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Bibliographic Details
Main Authors: Jee-Hoon Yap, Nee, J., Simic, E., Yiu, E., Yoon, J., Chung, J.E.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Capacitors
Data mining
Electrons
Semiconductor device modeling
Shape
Silicon
Thermal conductivity
Thermal engineering
Tunneling
Online Access:Request full text
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Summary:High-field electrical conduction through SIMOX buried oxide exhibits distinctly different characteristics from thermal SiO/sub 2/. A quantitative model for high-field SIMOX BOX conduction is proposed which provides an explanation for both the earlier onset of BOX Fowler-Nordheim tunneling current as well as its pronounced polarity dependence. This model is based on barrier-height-lowering due to BOX silicon-rich nonstoichiometry and FN-cathode electric-field enhancement due to silicon islands within the buried oxide.
DOI:10.1109/SOI.1994.514262