A chip design concept for an extremely low on-state voltage 1200V FS-IGBT/FWD with high withstand capability for the MERS configuration

This paper describes IGBT and FWD design concept and measured results for the application of magnetic energy recovery switch (MERS) configuration for the first time. Since the switching frequency in the MERS application is so slow of 50-60 Hz that a lower on-state voltage drop is strongly required f...

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Bibliographic Details
Main Authors: Iwamuro, N., Yamazaki, T., Shiigi, T., Shimada, R.
Format: Conference Proceeding
Language:English
Subjects:
Chip scale packaging
Low voltage
Online Access:Request full text
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Summary:This paper describes IGBT and FWD design concept and measured results for the application of magnetic energy recovery switch (MERS) configuration for the first time. Since the switching frequency in the MERS application is so slow of 50-60 Hz that a lower on-state voltage drop is strongly required for the IGBT and FWD chips even though their fast switching features are sacrificed. Therefor e, the newly developed IGBT and FWD chip for this configuration exhibits an extreme low on-state voltage drop while maintaining its turn-off withstand capability.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2009.5158026