Fabrication of trench isolation and trench power MOSFETs in a smart power IC Technology with a single trench unit process

We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (R on ldrA), below 50 mOmega-mm 2 and a typical breakdown voltage, V br , of 95 V. The t...

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Bibliographic Details
Main Authors: Kadow, C., Decker, S., Dibra, D., Krischke, N., Lanzerstorfer, S., Maier, H., Meyer, T., Vannucci, N., Zink, R.
Format: Conference Proceeding
Language:English
Subjects:
Automotive engineering
Avalanche breakdown
Costs
Electrostatics
Fabrication
Isolation technology
Logic devices
MOSFETs
Potential well
Power integrated circuits
Online Access:Request full text
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Summary:We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (R on ldrA), below 50 mOmega-mm 2 and a typical breakdown voltage, V br , of 95 V. The trench isolation provides well isolation up to 90 V. Using a single trench unit process for both devices results in low process costs. In addition both power and logic areas of a chip benefit from the trench process.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2009.5158042