Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

Low current/voltage (~10 nA/1.0V) resistive switching memory device in a Cu/Ta 2 O 5 /W structure has been proposed. The low resistance state (R Low ) of the memory device decreases with increasing the programming current from 10 nA to 1 mA, which can be useful for multi-level of data storage. This...

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Bibliographic Details
Main Authors: Rahaman, S.Z., Maikap, S., Lin, C.-H., Wu, T.-Y., Chen, Y.S., Tzeng, P.-J., Chen, F., Lai, C.S., Kao, M.-J., Tsai, M.-J.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Electrodes
Electronics industry
Industrial electronics
Low voltage
Nonvolatile memory
Scalability
Solids
Sputtering
Threshold voltage
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Summary:Low current/voltage (~10 nA/1.0V) resistive switching memory device in a Cu/Ta 2 O 5 /W structure has been proposed. The low resistance state (R Low ) of the memory device decreases with increasing the programming current from 10 nA to 1 mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (R High /R Low ) of 5.3times10 7 , good endurance of >10 3 cycles, and excellent retention (>11 hours) with resistance ratio of > 9times10 3 can be useful in future non-volatile memory applications.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2009.5159279