Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells

Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for accele...

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Bibliographic Details
Published in:IEEE electron device letters 2009-08, Vol.30 (8), p.876-878
Main Authors: Symanczyk, R., Bruchhaus, R., Dittrich, R., Kund, M.
Format: Article
Language:English
Subjects:
Active matrix technology
Applied sciences
Bridges
CBRAM
chalcogenide
Conducting materials
Data storage
Design. Technologies. Operation analysis. Testing
Electric resistance
Electrodes
Electronics
Exact sciences and technology
Extrapolation
Integrated circuits
Integrated circuits by function (including memories and processors)
Life estimation
Magnetic and optical mass memories
Mathematical analysis
Memory devices
Nonvolatile memory
Recording
reliability
Reproducibility
Resistivity
retention
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solids
Stability
Storage and reproduction of information
Stores
Testing
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Description
Summary:Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS 2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25degC to 85degC. Based on the calculated activation energy, ten years of data retention is extrapolated.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2024623