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Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells

Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for accele...

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Published in:	IEEE electron device letters 2009-08, Vol.30 (8), p.876-878
Main Authors:	Symanczyk, R., Bruchhaus, R., Dittrich, R., Kund, M.
Format:	Article
Language:	English
Subjects:	Active matrix technology Applied sciences Bridges CBRAM chalcogenide Conducting materials Data storage Design. Technologies. Operation analysis. Testing Electric resistance Electrodes Electronics Exact sciences and technology Extrapolation Integrated circuits Integrated circuits by function (including memories and processors) Life estimation Magnetic and optical mass memories Mathematical analysis Memory devices Nonvolatile memory Recording reliability Reproducibility Resistivity retention Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solids Stability Storage and reproduction of information Stores Testing
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creator	Symanczyk, R. Bruchhaus, R. Dittrich, R. Kund, M.
description	Conductive-bridging memory can store information as different resistance states even when not powered. In order to check reliability challenges for nonvolatile-memory applications, the data retention has to be tested carefully. This letter describes a new test scheme using electrical bias for acceleration and enables the fast recording of such detailed information. Experimental data for memory devices based on Ag:GeS 2 as the active-matrix material are presented. Excellent stability and reproducibility of the resistance states for more than 300 cycles are demonstrated in the temperature range from 25degC to 85degC. Based on the calculated activation energy, ten years of data retention is extrapolated.
doi_str_mv	10.1109/LED.2009.2024623
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subjects	Active matrix technology Applied sciences Bridges CBRAM chalcogenide Conducting materials Data storage Design. Technologies. Operation analysis. Testing Electric resistance Electrodes Electronics Exact sciences and technology Extrapolation Integrated circuits Integrated circuits by function (including memories and processors) Life estimation Magnetic and optical mass memories Mathematical analysis Memory devices Nonvolatile memory Recording reliability Reproducibility Resistivity retention Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solids Stability Storage and reproduction of information Stores Testing
title	Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells
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