Independent Double-Gate Fin SONOS Flash Memory Fabricated With Sidewall Spacer Patterning

Fin silicon-oxide-nitride-oxide-semiconductor (SONOS) flash memories having independent double gates are fabricated and characterized. This device has two sidewall gates sharing one Si fin. To achieve narrow Si fin width over the photolithography limitation, sidewall spacer patterning is adopted. Sp...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-08, Vol.56 (8), p.1721-1728
Main Authors: Yun, Jang-Gn, Kim, Yoon, Park, Il Han, Lee, Jung Hoon, Kang, Daewoong, Lee, Myoungrack, Shin, Hyungcheol, Lee, Jong Duk, Park, Byung-Gook
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Devices
Electrical properties
Electronics
Exact sciences and technology
Fabrication
Fin silicon-oxide-nitride-oxide-semiconductor (SONOS) Flash memory
Flash memory
Flash memory (computers)
Gates
Integrated circuits
Integrated circuits by function (including memories and processors)
interference coupling
Lithography
Logic gates
Microelectronic fabrication (materials and surfaces technology)
paired cell interference (PCI)
Patterning
Photolithography
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
separated double gates
sidewall spacer patterning
Silicon
SONOS devices
Spacers
Threshold voltage
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Description
Summary:Fin silicon-oxide-nitride-oxide-semiconductor (SONOS) flash memories having independent double gates are fabricated and characterized. This device has two sidewall gates sharing one Si fin. To achieve narrow Si fin width over the photolithography limitation, sidewall spacer patterning is adopted. Specific fabrication processes for the fin SONOS flash memory having independent double gates are described. Electrical properties related to the opposite gate dependence are characterized. Measurement results of the paired cell interference are delivered.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2024228