An 8 - 18 GHz wideband SiGe BiCMOS low noise amplifier

In this paper, an 8 - 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-mum SiGe BiCMOS technology was presented. The LNA achieves 16-dB of gain with 1.5 dB variation over the 8 GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The...

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Bibliographic Details
Main Authors: Desheng Ma, Dai, F.F., Jaeger, R.C., Irwin, J.D.
Format: Conference Proceeding
Language:English
Subjects:
Acoustic reflection
active balun
Active noise reduction
BiCMOS
BiCMOS integrated circuits
Broadband amplifiers
Frequency
Gain
Germanium silicon alloys
Impedance matching
Ku-band
linearity
Low noise amplifier
Low-noise amplifiers
resistive feedback
SiGe
Silicon germanium
wideband
X-band
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Description
Summary:In this paper, an 8 - 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-mum SiGe BiCMOS technology was presented. The LNA achieves 16-dB of gain with 1.5 dB variation over the 8 GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8 GHz and increases to 6 dB at 18 GHz. The measured IIP3 is -15-dBm with 17 mA total current consumption from 2.2 V supply.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2009.5165850