A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um 2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineer...

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Main Authors: Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
Differential amplifiers
Heterojunction bipolar transistors
III-V semiconductor materials
Indium phosphide
Integrated circuit interconnections
Lattices
Monolithic integrated circuits
Nonhomogeneous media
Power engineering and energy
Silicon
Windows
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Summary:We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um 2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2009.5165896