C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circ...

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Bibliographic Details
Main Authors: Shigematsu, H., Inoue, Y., Akasegawa, A., Yamada, M., Masuda, S., Kamada, Y., Yamada, A., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Joshin, K., Hara, N.
Format: Conference Proceeding
Language:English
Subjects:
Broadband amplifiers
C-band
Dielectric substrates
Gallium nitride
GaN
High power amplifiers
Impedance
PAE
Power amplifiers
Power generation
Radar applications
Spaceborne radar
Transformers
X-band
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Summary:In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2009.5165934