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C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circ...

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Main Authors: Shigematsu, H., Inoue, Y., Akasegawa, A., Yamada, M., Masuda, S., Kamada, Y., Yamada, A., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Joshin, K., Hara, N.
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creator Shigematsu, H.
Inoue, Y.
Akasegawa, A.
Yamada, M.
Masuda, S.
Kamada, Y.
Yamada, A.
Kanamura, M.
Ohki, T.
Makiyama, K.
Okamoto, N.
Imanishi, K.
Kikkawa, T.
Joshin, K.
Hara, N.
description In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.
doi_str_mv 10.1109/MWSYM.2009.5165934
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Broadband amplifiers
C-band
Dielectric substrates
Gallium nitride
GaN
High power amplifiers
Impedance
PAE
Power amplifiers
Power generation
Radar applications
Spaceborne radar
Transformers
X-band
title C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE
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