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C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE
In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circ...
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creator | Shigematsu, H. Inoue, Y. Akasegawa, A. Yamada, M. Masuda, S. Kamada, Y. Yamada, A. Kanamura, M. Ohki, T. Makiyama, K. Okamoto, N. Imanishi, K. Kikkawa, T. Joshin, K. Hara, N. |
description | In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power. |
doi_str_mv | 10.1109/MWSYM.2009.5165934 |
format | conference_proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5165934</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5165934</ieee_id><sourcerecordid>5165934</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-9da5169ab54166240b71d99aac55197ae82fd806a42fbeb7120ca102af1debc13</originalsourceid><addsrcrecordid>eNpFkE1Lw0AYhNcvMK3-Ab3sxePG992vZI8lpFVoVVBpPZU3yQZXWhuSYvHfm9KCpxmegWEYxm4QYkRw97P568cslgAuNmiNU_qEDVBLrWUKGk9ZJE1iRSLRnv0HSp2zCFA7YbVZXLJB130BgEnRRizPREHfFVcaxJzv3eIAEPZgQk-82ex8y2ndrEIdfNvxXdh-8s1PDw2IO_4yyq_YRU2rzl8fdcjex_lb9iCmz5PHbDQVAROzFa6ifrejwmi0VmooEqycIyqNQZeQT2VdpWBJy7rwfSihJARJNVa-KFEN2e2hN3jvl00b1tT-Lo9fqD_Q3UrI</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Shigematsu, H. ; Inoue, Y. ; Akasegawa, A. ; Yamada, M. ; Masuda, S. ; Kamada, Y. ; Yamada, A. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Joshin, K. ; Hara, N.</creator><creatorcontrib>Shigematsu, H. ; Inoue, Y. ; Akasegawa, A. ; Yamada, M. ; Masuda, S. ; Kamada, Y. ; Yamada, A. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Joshin, K. ; Hara, N.</creatorcontrib><description>In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 1424428033</identifier><identifier>ISBN: 9781424428038</identifier><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1424428041</identifier><identifier>EISBN: 9781424428045</identifier><identifier>DOI: 10.1109/MWSYM.2009.5165934</identifier><language>eng</language><publisher>IEEE</publisher><subject>Broadband amplifiers ; C-band ; Dielectric substrates ; Gallium nitride ; GaN ; High power amplifiers ; Impedance ; PAE ; Power amplifiers ; Power generation ; Radar applications ; Spaceborne radar ; Transformers ; X-band</subject><ispartof>2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.1265-1268</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5165934$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5165934$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shigematsu, H.</creatorcontrib><creatorcontrib>Inoue, Y.</creatorcontrib><creatorcontrib>Akasegawa, A.</creatorcontrib><creatorcontrib>Yamada, M.</creatorcontrib><creatorcontrib>Masuda, S.</creatorcontrib><creatorcontrib>Kamada, Y.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Kanamura, M.</creatorcontrib><creatorcontrib>Ohki, T.</creatorcontrib><creatorcontrib>Makiyama, K.</creatorcontrib><creatorcontrib>Okamoto, N.</creatorcontrib><creatorcontrib>Imanishi, K.</creatorcontrib><creatorcontrib>Kikkawa, T.</creatorcontrib><creatorcontrib>Joshin, K.</creatorcontrib><creatorcontrib>Hara, N.</creatorcontrib><title>C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE</title><title>2009 IEEE MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.</description><subject>Broadband amplifiers</subject><subject>C-band</subject><subject>Dielectric substrates</subject><subject>Gallium nitride</subject><subject>GaN</subject><subject>High power amplifiers</subject><subject>Impedance</subject><subject>PAE</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Radar applications</subject><subject>Spaceborne radar</subject><subject>Transformers</subject><subject>X-band</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1424428033</isbn><isbn>9781424428038</isbn><isbn>1424428041</isbn><isbn>9781424428045</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFkE1Lw0AYhNcvMK3-Ab3sxePG992vZI8lpFVoVVBpPZU3yQZXWhuSYvHfm9KCpxmegWEYxm4QYkRw97P568cslgAuNmiNU_qEDVBLrWUKGk9ZJE1iRSLRnv0HSp2zCFA7YbVZXLJB130BgEnRRizPREHfFVcaxJzv3eIAEPZgQk-82ex8y2ndrEIdfNvxXdh-8s1PDw2IO_4yyq_YRU2rzl8fdcjex_lb9iCmz5PHbDQVAROzFa6ifrejwmi0VmooEqycIyqNQZeQT2VdpWBJy7rwfSihJARJNVa-KFEN2e2hN3jvl00b1tT-Lo9fqD_Q3UrI</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Shigematsu, H.</creator><creator>Inoue, Y.</creator><creator>Akasegawa, A.</creator><creator>Yamada, M.</creator><creator>Masuda, S.</creator><creator>Kamada, Y.</creator><creator>Yamada, A.</creator><creator>Kanamura, M.</creator><creator>Ohki, T.</creator><creator>Makiyama, K.</creator><creator>Okamoto, N.</creator><creator>Imanishi, K.</creator><creator>Kikkawa, T.</creator><creator>Joshin, K.</creator><creator>Hara, N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>200906</creationdate><title>C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE</title><author>Shigematsu, H. ; Inoue, Y. ; Akasegawa, A. ; Yamada, M. ; Masuda, S. ; Kamada, Y. ; Yamada, A. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Joshin, K. ; Hara, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-9da5169ab54166240b71d99aac55197ae82fd806a42fbeb7120ca102af1debc13</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Broadband amplifiers</topic><topic>C-band</topic><topic>Dielectric substrates</topic><topic>Gallium nitride</topic><topic>GaN</topic><topic>High power amplifiers</topic><topic>Impedance</topic><topic>PAE</topic><topic>Power amplifiers</topic><topic>Power generation</topic><topic>Radar applications</topic><topic>Spaceborne radar</topic><topic>Transformers</topic><topic>X-band</topic><toplevel>online_resources</toplevel><creatorcontrib>Shigematsu, H.</creatorcontrib><creatorcontrib>Inoue, Y.</creatorcontrib><creatorcontrib>Akasegawa, A.</creatorcontrib><creatorcontrib>Yamada, M.</creatorcontrib><creatorcontrib>Masuda, S.</creatorcontrib><creatorcontrib>Kamada, Y.</creatorcontrib><creatorcontrib>Yamada, A.</creatorcontrib><creatorcontrib>Kanamura, M.</creatorcontrib><creatorcontrib>Ohki, T.</creatorcontrib><creatorcontrib>Makiyama, K.</creatorcontrib><creatorcontrib>Okamoto, N.</creatorcontrib><creatorcontrib>Imanishi, K.</creatorcontrib><creatorcontrib>Kikkawa, T.</creatorcontrib><creatorcontrib>Joshin, K.</creatorcontrib><creatorcontrib>Hara, N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shigematsu, H.</au><au>Inoue, Y.</au><au>Akasegawa, A.</au><au>Yamada, M.</au><au>Masuda, S.</au><au>Kamada, Y.</au><au>Yamada, A.</au><au>Kanamura, M.</au><au>Ohki, T.</au><au>Makiyama, K.</au><au>Okamoto, N.</au><au>Imanishi, K.</au><au>Kikkawa, T.</au><au>Joshin, K.</au><au>Hara, N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE</atitle><btitle>2009 IEEE MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2009-06</date><risdate>2009</risdate><spage>1265</spage><epage>1268</epage><pages>1265-1268</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1424428033</isbn><isbn>9781424428038</isbn><eisbn>1424428041</eisbn><eisbn>9781424428045</eisbn><abstract>In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2009.5165934</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 0149-645X |
ispartof | 2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.1265-1268 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Broadband amplifiers C-band Dielectric substrates Gallium nitride GaN High power amplifiers Impedance PAE Power amplifiers Power generation Radar applications Spaceborne radar Transformers X-band |
title | C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T11%3A27%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=C-band%20340-W%20and%20X-band%20100-W%20GaN%20power%20amplifiers%20with%20over%2050-%25%20PAE&rft.btitle=2009%20IEEE%20MTT-S%20International%20Microwave%20Symposium%20Digest&rft.au=Shigematsu,%20H.&rft.date=2009-06&rft.spage=1265&rft.epage=1268&rft.pages=1265-1268&rft.issn=0149-645X&rft.eissn=2576-7216&rft.isbn=1424428033&rft.isbn_list=9781424428038&rft_id=info:doi/10.1109/MWSYM.2009.5165934&rft.eisbn=1424428041&rft.eisbn_list=9781424428045&rft_dat=%3Cieee_6IE%3E5165934%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-9da5169ab54166240b71d99aac55197ae82fd806a42fbeb7120ca102af1debc13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5165934&rfr_iscdi=true |