Study of random dopant fluctuation effects in fully depleted silicon on insulator MOSFET using analytical model

The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson's equation considering non-uniformly doped channel. Since analytical mo...

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Bibliographic Details
Main Authors: Rao, R., Katti, G., DasGupta, N., DasGupta, A.
Format: Conference Proceeding
Language:English
Subjects:
analytical model
Analytical models
Doping
Fluctuations
fully depleted silicon on insulator (FD SOI) MOSFET
MOSFET circuits
non-uniform doping
Numerical simulation
Random dopant fluctuation (RDF)
Resource description framework
Semiconductor process modeling
Silicon on insulator technology
Subthreshold current
Threshold voltage
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Description
Summary:The effect of random dopant fluctuation in the channel of a fully depleted SOI-MOSFET is investigated using analytical models for threshold voltage and subthreshold current. Analytical models are based on solving 2D Poisson's equation considering non-uniformly doped channel. Since analytical models are faster compared to numerical simulations, a large number of devices can be simulated.
DOI:10.1109/EDST.2009.5166108