High mobility III-V channel MOSFETs for post-Si CMOS applications

III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 muA/mum and transconductance of 793 muS/mum have been achiev...

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Main Authors: Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Bucchignano, J.J., Ruiz, N., Fogel, K.E., Sadana, D.K., Shahidi, G.G., Fompeyrine, J., Webb, D.J., Sousa, M., Marchiori, C., Germann, R., Shiu, K.T.
Format: Conference Proceeding
Language:English
Subjects:
Capacitive sensors
CMOS
CMOS technology
Electron mobility
Gallium arsenide
HEMTs
III-V
III-V semiconductor materials
Indium gallium arsenide
InGaAs short-channel MOSFET
MOSFETs
Power engineering and energy
scaling
Transconductance
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Summary:III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 muA/mum and transconductance of 793 muS/mum have been achieved. Scaling behavior has been investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2009.5166286