Operation of multi-level phase change memory using various programming techniques

In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cel...

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Bibliographic Details
Main Authors: Jun-Tin Lin, Yi-Bo Liao, Meng-Hsueh Chiang, Wei-Chou Hsu
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Crystallization
Heating
Logic
multi-level cell (MLC)
Nonvolatile memory
Phase change materials
Phase change memory
Phase change memory (PCM)
Space vector pulse width modulation
Temperature
Writing
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Description
Summary:In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2009.5166295