Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon

It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors-the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given v...

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Bibliographic Details
Main Authors: Tishkovsky, E.G., Obodnicov, V.I., Zabagonsky, Y.V.
Format: Conference Proceeding
Language:English
Subjects:
Avalanch diode
breakdown
carrier multiplication
Detectors
Diodes
Electric breakdown
Hydrodynamics
Impact ionization
p-n junction
P-n junctions
Seminars
Silicon
Thyristors
Voltage
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Summary:It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors-the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated-the distance in the planar plain between electrode and the junction line must be greater than the punch-through length.
ISSN:1815-3712
DOI:10.1109/EDM.2009.5173914