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Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon

It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors-the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given v...

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Main Authors:	Tishkovsky, E.G., Obodnicov, V.I., Zabagonsky, Y.V.
Format:	Conference Proceeding
Language:	English
Subjects:	Avalanch diode breakdown carrier multiplication Detectors Diodes Electric breakdown Hydrodynamics Impact ionization p-n junction P-n junctions Seminars Silicon Thyristors Voltage
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creator	Tishkovsky, E.G. Obodnicov, V.I. Zabagonsky, Y.V.
description	It was shown with the use of 2D-simulation of the model diodes, that the premature breakdown caused by the positive charge build in the oxide may be initiated at least by two factors-the punch-through and/or the premature avalanch multiplication of carriers near the surface of the device. At given voltage and given oxide charge the simple design rule may be fomulated-the distance in the planar plain between electrode and the junction line must be greater than the punch-through length.
doi_str_mv	10.1109/EDM.2009.5173914
format	conference_proceeding
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identifier	ISSN: 1815-3712
ispartof	2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, 2009, p.12-16
issn	1815-3712
language	eng
recordid	cdi_ieee_primary_5173914
source	IEEE Xplore All Conference Series
subjects	Avalanch diode breakdown carrier multiplication Detectors Diodes Electric breakdown Hydrodynamics Impact ionization p-n junction P-n junctions Seminars Silicon Thyristors Voltage
title	Simulation of the premature breakdown of the planar p-n junction at the avalanch multiplication of carriers in silicon
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