Investigation on SnS film by RF sputtering for photovoltaic application

Tin sulfide (SnS) solar cell semiconductor thin films were prepared by an RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Usi...

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Bibliographic Details
Main Authors: Wei Guang-Pu, Zhang Zhi-Lin, Zhao Wei-Ming, Gao Xiang-Hong, Chen Wei-Qun, Tanamura, H., Yamaguchi, M., Noguchi, H., Nagatomo, T., Omoto, O.
Format: Conference Proceeding
Language:English
Subjects:
Optical devices
Optical films
Photovoltaic cells
Photovoltaic systems
Radio frequency
Semiconductor films
Semiconductor thin films
Solar power generation
Sputtering
Tin
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Summary:Tin sulfide (SnS) solar cell semiconductor thin films were prepared by an RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400/spl deg/C), n-type SnS homojunction solar cell thin films were obtained.
DOI:10.1109/WCPEC.1994.519977