Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture

We report the first demonstration of dopant-segregated metal-semiconductor-metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. I ON enhancement of 72% and 26% over convention...

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Bibliographic Details
Main Authors: Hoong-Shing Wong, Lian-Huat Tan, Lap Chan, Guo-Qiang Lo, Samudra, G., Yee-Chia Yeo
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Contact resistance
FETs
Implants
Intrusion detection
Microelectronics
Quantum computing
Silicidation
Silicon
Wire
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Summary:We report the first demonstration of dopant-segregated metal-semiconductor-metal (DS-MSM) heterostructure on Gate-All-Around Si quantum wire field-effect transistor (QWFET), achieving low external resistance and possibly injection velocity enhancement. I ON enhancement of 72% and 26% over conventional QWFETs are obtained for n- and p- DS-MSM QWFETs, respectively. Record high single Si QWFET I ON , normalized by quantum wire diameter, of 4.03 mA/mum (n-DS-MSM QWFET) and 1.5 mA/mum (p-DS-MSM QWFET) are reported. In addition, larger I ON values are observed for as compared to channel orientation DS-MSM QWFETs.
ISSN:0743-1562