Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices

We propose pipe-shaped bit cost scalable (P-BiCS) flash memory which consists of pipe-shaped NAND strings folded like a u-shape instead of the straight-shape. P-BiCS flash technology achieves a highly reliable memory film of which the program and erase (P/E) operation is managed by Fowler-Nordheim (...

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Bibliographic Details
Main Authors: Katsumata, R., Kito, M., Fukuzumi, Y., Kido, M., Tanaka, H., Komori, Y., Ishiduki, M., Matsunami, J., Fujiwara, T., Nagata, Y., Li Zhang, Iwata, Y., Kirisawa, R., Aochi, H., Nitayama, A.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Financial management
Flash memory
Memory management
Technology management
Testing
Thermal management
Thermal resistance
Tunneling
Wiring
Online Access:Request full text
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Summary:We propose pipe-shaped bit cost scalable (P-BiCS) flash memory which consists of pipe-shaped NAND strings folded like a u-shape instead of the straight-shape. P-BiCS flash technology achieves a highly reliable memory film of which the program and erase (P/E) operation is managed by Fowler-Nordheim (FN) tunneling, that is originated by the strong curvature effect of its small pipe radius, a low resistance source line by the layered metal wirings and a tightly controlled diffusion profile for the select-gate (SG) transistor due to low thermal budget. The effective 1-bit cell area of 0.00082 mum 2 and its functionality are successfully demonstrated using the 32 Gbit test chip with the 3-dimensionally 16 stacked layers and the multi-level-cell (MLC) operation by 60 nm P-BiCS flash technology.
ISSN:0743-1562