SEGR study on Power MOSFETs: Multiple impacts assumption

The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side i...

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Main Authors: Peyre, D., Binois, C., Mangeret, R., Salvaterra, G., Beaumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfevre, E., Sturesson, F., Poivey, C., Berger, G., Foy, J.C., Piquet, B.
Format: Conference Proceeding
Language:English
Subjects:
cumulative phenomenon
Current measurement
Degradation
heavy ions
Hot carriers
Life estimation
MOSFETs
multiple impacts
Particle beams
PGST
Post-irradiation-Gate-Stress-Test
Power MOSFET
SEGR
Structural beams
Synthetic aperture sonar
Testing
Voltage measurement
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Summary:The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. The heavy ions ranges are tuned in such way to control whether they hit the gate or not, during backside irradiation. Gate-to-source current I gss (phi) is measured versus heavy ions (H.I.) fluence phi. Post-irradiation-gate-stress-test (PGST) allows to measure breakdown voltage V BD (phi) as being decreasing with (H.I.) fluence. Based on these experimental results, an hypothesis of substrate-generated ldquohot carriersrdquo impact overlap may explain gate degradation until SEGR triggering. This last hypothesis is supported by statistical approach model of heavy ions multiple impact.
ISSN:0379-6566
DOI:10.1109/RADECS.2007.5205488