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SEGR study on Power MOSFETs: Multiple impacts assumption
The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side i...
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| creator | Peyre, D. Binois, C. Mangeret, R. Salvaterra, G. Beaumel, M. Pontoni, F. Bouchet, T. Pater, L. Bezerra, F. Ecoffet, R. Lorfevre, E. Sturesson, F. Poivey, C. Berger, G. Foy, J.C. Piquet, B. |
| description | The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. The heavy ions ranges are tuned in such way to control whether they hit the gate or not, during backside irradiation. Gate-to-source current I gss (phi) is measured versus heavy ions (H.I.) fluence phi. Post-irradiation-gate-stress-test (PGST) allows to measure breakdown voltage V BD (phi) as being decreasing with (H.I.) fluence. Based on these experimental results, an hypothesis of substrate-generated ldquohot carriersrdquo impact overlap may explain gate degradation until SEGR triggering. This last hypothesis is supported by statistical approach model of heavy ions multiple impact. |
| doi_str_mv | 10.1109/RADECS.2007.5205488 |
| format | conference_proceeding |
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This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. The heavy ions ranges are tuned in such way to control whether they hit the gate or not, during backside irradiation. Gate-to-source current I gss (phi) is measured versus heavy ions (H.I.) fluence phi. Post-irradiation-gate-stress-test (PGST) allows to measure breakdown voltage V BD (phi) as being decreasing with (H.I.) fluence. Based on these experimental results, an hypothesis of substrate-generated ldquohot carriersrdquo impact overlap may explain gate degradation until SEGR triggering. This last hypothesis is supported by statistical approach model of heavy ions multiple impact.</description><identifier>ISSN: 0379-6566</identifier><identifier>ISBN: 9781424417049</identifier><identifier>ISBN: 142441704X</identifier><identifier>DOI: 10.1109/RADECS.2007.5205488</identifier><language>eng</language><publisher>IEEE</publisher><subject>cumulative phenomenon ; Current measurement ; Degradation ; heavy ions ; Hot carriers ; Life estimation ; MOSFETs ; multiple impacts ; Particle beams ; PGST ; Post-irradiation-Gate-Stress-Test ; Power MOSFET ; SEGR ; Structural beams ; Synthetic aperture sonar ; Testing ; Voltage measurement</subject><ispartof>2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007, p.1-8</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5205488$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27923,54918</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5205488$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Peyre, D.</creatorcontrib><creatorcontrib>Binois, C.</creatorcontrib><creatorcontrib>Mangeret, R.</creatorcontrib><creatorcontrib>Salvaterra, G.</creatorcontrib><creatorcontrib>Beaumel, M.</creatorcontrib><creatorcontrib>Pontoni, F.</creatorcontrib><creatorcontrib>Bouchet, T.</creatorcontrib><creatorcontrib>Pater, L.</creatorcontrib><creatorcontrib>Bezerra, F.</creatorcontrib><creatorcontrib>Ecoffet, R.</creatorcontrib><creatorcontrib>Lorfevre, E.</creatorcontrib><creatorcontrib>Sturesson, F.</creatorcontrib><creatorcontrib>Poivey, C.</creatorcontrib><creatorcontrib>Berger, G.</creatorcontrib><creatorcontrib>Foy, J.C.</creatorcontrib><creatorcontrib>Piquet, B.</creatorcontrib><title>SEGR study on Power MOSFETs: Multiple impacts assumption</title><title>2007 9th European Conference on Radiation and Its Effects on Components and Systems</title><addtitle>RADECS</addtitle><description>The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. The heavy ions ranges are tuned in such way to control whether they hit the gate or not, during backside irradiation. Gate-to-source current I gss (phi) is measured versus heavy ions (H.I.) fluence phi. Post-irradiation-gate-stress-test (PGST) allows to measure breakdown voltage V BD (phi) as being decreasing with (H.I.) fluence. Based on these experimental results, an hypothesis of substrate-generated ldquohot carriersrdquo impact overlap may explain gate degradation until SEGR triggering. This last hypothesis is supported by statistical approach model of heavy ions multiple impact.</description><subject>cumulative phenomenon</subject><subject>Current measurement</subject><subject>Degradation</subject><subject>heavy ions</subject><subject>Hot carriers</subject><subject>Life estimation</subject><subject>MOSFETs</subject><subject>multiple impacts</subject><subject>Particle beams</subject><subject>PGST</subject><subject>Post-irradiation-Gate-Stress-Test</subject><subject>Power MOSFET</subject><subject>SEGR</subject><subject>Structural beams</subject><subject>Synthetic aperture sonar</subject><subject>Testing</subject><subject>Voltage measurement</subject><issn>0379-6566</issn><isbn>9781424417049</isbn><isbn>142441704X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj9FqwjAUQAPbYOL6Bb7kB9rdJLe9yd7EdW6gOKzvUpMUAq0tTcvw7zeYT-fpHDiMrQRkQoB5Pa7fy02VSQDKcgk5av3AEkNaoEQUBGge2QIUmbTIi-KZJTGGC4ACIaURC6arcnvkcZrdjfdX_t3_-JHvD9VHeYpvfD-3Uxhaz0M31HaKvI5x7oYp9NcX9tTUbfTJnUt2-nM2n-nusP3arHdpMDCl5Kgx2ChAdFpZWaB3gB6RnHUIAqykmiR5ZZWT9uIMgSsMEmhbe2XUkq3-s8F7fx7G0NXj7XxfVb-V1Eal</recordid><startdate>200709</startdate><enddate>200709</enddate><creator>Peyre, D.</creator><creator>Binois, C.</creator><creator>Mangeret, R.</creator><creator>Salvaterra, G.</creator><creator>Beaumel, M.</creator><creator>Pontoni, F.</creator><creator>Bouchet, T.</creator><creator>Pater, L.</creator><creator>Bezerra, F.</creator><creator>Ecoffet, R.</creator><creator>Lorfevre, E.</creator><creator>Sturesson, F.</creator><creator>Poivey, C.</creator><creator>Berger, G.</creator><creator>Foy, J.C.</creator><creator>Piquet, B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200709</creationdate><title>SEGR study on Power MOSFETs: Multiple impacts assumption</title><author>Peyre, D. ; Binois, C. ; Mangeret, R. ; Salvaterra, G. ; Beaumel, M. ; Pontoni, F. ; Bouchet, T. ; Pater, L. ; Bezerra, F. ; Ecoffet, R. ; Lorfevre, E. ; Sturesson, F. ; Poivey, C. ; Berger, G. ; Foy, J.C. ; Piquet, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7d7f94f3044d83c264ed04e447dcd4010c27a727e3c3d2cbd970d694708cae393</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><topic>cumulative phenomenon</topic><topic>Current measurement</topic><topic>Degradation</topic><topic>heavy ions</topic><topic>Hot carriers</topic><topic>Life estimation</topic><topic>MOSFETs</topic><topic>multiple impacts</topic><topic>Particle beams</topic><topic>PGST</topic><topic>Post-irradiation-Gate-Stress-Test</topic><topic>Power MOSFET</topic><topic>SEGR</topic><topic>Structural beams</topic><topic>Synthetic aperture sonar</topic><topic>Testing</topic><topic>Voltage measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Peyre, D.</creatorcontrib><creatorcontrib>Binois, C.</creatorcontrib><creatorcontrib>Mangeret, R.</creatorcontrib><creatorcontrib>Salvaterra, G.</creatorcontrib><creatorcontrib>Beaumel, M.</creatorcontrib><creatorcontrib>Pontoni, F.</creatorcontrib><creatorcontrib>Bouchet, T.</creatorcontrib><creatorcontrib>Pater, L.</creatorcontrib><creatorcontrib>Bezerra, F.</creatorcontrib><creatorcontrib>Ecoffet, R.</creatorcontrib><creatorcontrib>Lorfevre, E.</creatorcontrib><creatorcontrib>Sturesson, F.</creatorcontrib><creatorcontrib>Poivey, C.</creatorcontrib><creatorcontrib>Berger, G.</creatorcontrib><creatorcontrib>Foy, J.C.</creatorcontrib><creatorcontrib>Piquet, B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEL</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Peyre, D.</au><au>Binois, C.</au><au>Mangeret, R.</au><au>Salvaterra, G.</au><au>Beaumel, M.</au><au>Pontoni, F.</au><au>Bouchet, T.</au><au>Pater, L.</au><au>Bezerra, F.</au><au>Ecoffet, R.</au><au>Lorfevre, E.</au><au>Sturesson, F.</au><au>Poivey, C.</au><au>Berger, G.</au><au>Foy, J.C.</au><au>Piquet, B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>SEGR study on Power MOSFETs: Multiple impacts assumption</atitle><btitle>2007 9th European Conference on Radiation and Its Effects on Components and Systems</btitle><stitle>RADECS</stitle><date>2007-09</date><risdate>2007</risdate><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>0379-6566</issn><isbn>9781424417049</isbn><isbn>142441704X</isbn><abstract>The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. The heavy ions ranges are tuned in such way to control whether they hit the gate or not, during backside irradiation. Gate-to-source current I gss (phi) is measured versus heavy ions (H.I.) fluence phi. Post-irradiation-gate-stress-test (PGST) allows to measure breakdown voltage V BD (phi) as being decreasing with (H.I.) fluence. Based on these experimental results, an hypothesis of substrate-generated ldquohot carriersrdquo impact overlap may explain gate degradation until SEGR triggering. This last hypothesis is supported by statistical approach model of heavy ions multiple impact.</abstract><pub>IEEE</pub><doi>10.1109/RADECS.2007.5205488</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0379-6566 |
| ispartof | 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007, p.1-8 |
| issn | 0379-6566 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | cumulative phenomenon Current measurement Degradation heavy ions Hot carriers Life estimation MOSFETs multiple impacts Particle beams PGST Post-irradiation-Gate-Stress-Test Power MOSFET SEGR Structural beams Synthetic aperture sonar Testing Voltage measurement |
| title | SEGR study on Power MOSFETs: Multiple impacts assumption |
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