Defect thermal ionization energies in Cu-III-VI2 compound semiconductors

Results of an analysis of the dependence of the thermal ionization energies of various defect centres in ternary Cu-III-VI 2 chalcopyrite compound semiconductors are presented. It is established that this dependence can be satisfactorily described by using a simple electrostatic interaction model be...

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Bibliographic Details
Main Author: Podor, B.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric constant
Electrostatics
Erbium
Ionization
Kalman filters
Materials science and technology
Microelectronics
Neodymium
Semiconductor materials
Thermal engineering
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Description
Summary:Results of an analysis of the dependence of the thermal ionization energies of various defect centres in ternary Cu-III-VI 2 chalcopyrite compound semiconductors are presented. It is established that this dependence can be satisfactorily described by using a simple electrostatic interaction model between the charged centres.
ISSN:2161-2528
DOI:10.1109/ISSE.2009.5206953