Extending gate dielectric scaling limit by use of nitride or oxynitride

Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited (JVD) nitrides/oxynitrides are shown to verify th...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang, X.W., Shi, Y., Ma, T.P., Cui, G.J., Tamagawa, T., Golz, J.W., Halpen, B.L., Schmitt, J.J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance-voltage characteristics
Dielectric constant
Dielectric devices
Electric breakdown
Electron traps
High-K gate dielectrics
Leakage current
Semiconductor films
Silicon
Tunneling
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Theoretical calculations indicate that the tunneling currents in silicon nitride or oxynitride are greatly reduced compared to those in SiO/sub 2/ for equivalent oxide thicknesses (EOT) below 4 nm. Experimental results obtained on Jet Vapor Deposited (JVD) nitrides/oxynitrides are shown to verify the theoretical trend. These results suggest that extending the scaling limit well below 4 nm of EOT is possible with the JVD nitride.
DOI:10.1109/VLSIT.1995.520881