A new high volume MOVPE reactor for III-V solar cells

A new MOVPE reactor is described which allows cost effective manufacturing of GaAs/Ge solar cells. The reactor, which has a batch size in excess of 0.25 m/sup 2/, was co-developed by Spectrolab and Aixtron Semiconductor Technologies over a two year time frame and was installed at Spectrolab in late...

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Bibliographic Details
Main Authors: Ermer, J., Vijaykumar, P.S., Chang, K.I., Lillington, D.R., Cavicchi, B.T., Woelk, E., Strauch, G., Schmitz, D., Jurgensen, H.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Epitaxial growth
Epitaxial layers
Gallium arsenide
III-V semiconductor materials
Inductors
Manufacturing
Photovoltaic cells
Satellites
Semiconductor device manufacture
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Summary:A new MOVPE reactor is described which allows cost effective manufacturing of GaAs/Ge solar cells. The reactor, which has a batch size in excess of 0.25 m/sup 2/, was co-developed by Spectrolab and Aixtron Semiconductor Technologies over a two year time frame and was installed at Spectrolab in late 1993. Manufacturing readiness data on large area single junction GaAs/Ge solar cells show that the thickness and compositional uniformity of GaAs and AlGaAs layers grown in the system are /spl plusmn/3%, and /spl plusmn/1.5% respectively. There is excellent correlation between empirical data and simulations performed during the initial reactor development phase. The minimum average AM0, 28/spl deg/C efficiencies of 7 mil and 5.5 mil single junction GaAs/Ge solar cells, manufactured from material grown on this system, are over 18.5%.
DOI:10.1109/WCPEC.1994.521645