The growth and radiation response of n/sup +/p deep homojunction InP solar cells

InP solar cells grown by metal organic chemical vapor deposition (MOCVD) exhibit a higher beginning of life efficiency (BOL) than InP solar cells grown by thermally diffused junctions (DJ). However, cells grown by MOCVD do not display the nearly complete recovery in photovoltaic (PV) parameters upon...

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Bibliographic Details
Main Authors: Panunto, M.J., Walters, R.J., Messenger, S.R., Summers, G.P., Timmons, M.L., Venkatasubramanian, R., Hancock, J.A., Hills, J.S.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Chemical vapor deposition
Displays
Indium phosphide
Laboratories
MOCVD
Organic chemicals
Photovoltaic cells
Photovoltaic systems
Solar power generation
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Summary:InP solar cells grown by metal organic chemical vapor deposition (MOCVD) exhibit a higher beginning of life efficiency (BOL) than InP solar cells grown by thermally diffused junctions (DJ). However, cells grown by MOCVD do not display the nearly complete recovery in photovoltaic (PV) parameters upon annealing that DJ cells do. To investigate the cause of this different behavior the Research Triangle Institute (RTI), contracted by the Naval Research Laboratory, fabricated epitaxial MOCVD InP solar cells with nonuniform dopant profiles grown to mimic the structure of the DJ cell with the goal that these cells would also show the DJ cell's annealing characteristics. Cells were grown on both B and oriented InP substrates to see if this would influence the cell's radiation resistance. Preliminary results of the effect of 1 MeV electron irradiation on the PV parameters of both kinds of cells are presented.
DOI:10.1109/WCPEC.1994.521658