Preparation of homogeneous InP substrates by VGF-growth and wafer annealing

We have analyzed the microscopic and macroscopic uniformity of as-grown and annealed low Fe-doped InP-wafers grown by different methods (LEC, vertical gradient freeze). Though the annealing is advantageous with respect to the levelling of striations, additional non-uniformity on the microscopic scal...

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Bibliographic Details
Main Authors: Hirt, G., Hoffmann, B., Kretzer, U., Woitech, A., Zemke, D., Muller, G.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Atmosphere
Charge measurement
Etching
Gettering
Indium phosphide
Iron
Microscopy
Photoluminescence
Spatial resolution
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Summary:We have analyzed the microscopic and macroscopic uniformity of as-grown and annealed low Fe-doped InP-wafers grown by different methods (LEC, vertical gradient freeze). Though the annealing is advantageous with respect to the levelling of striations, additional non-uniformity on the microscopic scale is created. The origin of these spots of enhanced photoluminescence might be related to a gettering of Fe at dislocations, which in consequence leaves a vicinity with a reduced Fe-concentration.
DOI:10.1109/ICIPRM.1995.522069