InP islands as self-assembled quantum structures

Self-assembled quantum dots have been grown in the InP/GaInP material system on GaAs substrates. The different types of dots, differentiated by size, exhibit different luminescence features. In particular, peaks at 1.82 eV and 1.57 eV have been observed. Two methods have been utilized to study emiss...

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Bibliographic Details
Main Authors: Reaves, C.M., Cevallos, N.A., Hsueh, G.C., Cheng, Y.M., Weinberg, W.H., Petroff, P.M., DenBaars, S.P.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Electrons
Etching
Gallium arsenide
Indium phosphide
Luminescence
Photoluminescence
Quantum computing
Quantum dots
Substrates
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Summary:Self-assembled quantum dots have been grown in the InP/GaInP material system on GaAs substrates. The different types of dots, differentiated by size, exhibit different luminescence features. In particular, peaks at 1.82 eV and 1.57 eV have been observed. Two methods have been utilized to study emission from small regions of the sample: photoluminescence of samples with etched mesas, and cathodoluminescene of samples that have been thinned for electron microscopy. Results from both methods are discussed.
DOI:10.1109/ICIPRM.1995.522141