Effects of sol-gel PZT film thickness and electrode structure on the electrical behavior of Pt/PZT/Pt capacitors

Sol-gel derived lead zirconate titanate (PZT) films were deposited and crystallized on platinized Si/SiO/sub 2/ and Al/sub 2/O/sub 3/ wafer substrates in the film thickness range of 500-7000 /spl Aring/. Electrical testing was conducted to evaluate the effect of PZT film thickness on capacitor perfo...

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Bibliographic Details
Main Authors: Kneer, E.A., Birnie, D.P., Teowee, G., Podlesny, J.C.
Format: Conference Proceeding
Language:English
Subjects:
Adhesives
Conductive films
Crystallization
Electrodes
Optical films
Optical microscopy
Semiconductor films
Substrates
Testing
Titanium compounds
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Summary:Sol-gel derived lead zirconate titanate (PZT) films were deposited and crystallized on platinized Si/SiO/sub 2/ and Al/sub 2/O/sub 3/ wafer substrates in the film thickness range of 500-7000 /spl Aring/. Electrical testing was conducted to evaluate the effect of PZT film thickness on capacitor performance. Optical microscopy and AFM data were used to identify factors which might cause shorting in crystallized PZT films. Thin films of Ti or TiO/sub x/ were used for Pt bottom and top electrode adhesion in the substrate/Pt/PZT/Pt structured device. The effect of these adhesion layers has been investigated for several electrode composites. The fatigue behavior of these devices has been analyzed and compared.
DOI:10.1109/ISAF.1994.522398