Pockels effect in short period silicon germanium superlattices

We introduce a method for calculating Pockels coefficients in SiGe superlattices. We show that the Pockels effect in (Si) 1 (Ge) 1 superlattices is half as strong as in GaAs. This opens a path to efficient CMOS-compatible modulators.

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Bibliographic Details
Main Authors: Khurgin, J.B., Pruessner, M.W., Stievater, T.H., Rabinovich, W.S.
Format: Conference Proceeding
Language:English
Subjects:
Frequency conversion
Gallium arsenide
Germanium silicon alloys
Nonlinear optics
Optical interconnections
Optical modulation
Optical superlattices
Phase modulation
Semiconductor superlattices
Silicon germanium
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Description
Summary:We introduce a method for calculating Pockels coefficients in SiGe superlattices. We show that the Pockels effect in (Si) 1 (Ge) 1 superlattices is half as strong as in GaAs. This opens a path to efficient CMOS-compatible modulators.
ISSN:2160-9004
DOI:10.1364/CLEO.2009.CThM1