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Non-inductive impedance transformer
An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 /spl Omega/ to very high values of approximately several k/spl Omega/ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal...
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Main Authors: | , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 /spl Omega/ to very high values of approximately several k/spl Omega/ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal advantage of the circuit is that the speed and bandwidth sensitivity is weakly affected by detector source capacity (up to 1 nF), thereby allowing greater design flexibility for both hadronic and electromagnetic calorimetry, or even charge particle detection (tracking) integrated within the same device. The simulated risetime is less than 2 ns, and power dissipated is less than 40 mW. |
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ISSN: | 0094-2898 2161-8135 |
DOI: | 10.1109/SSST.1993.522761 |