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Non-inductive impedance transformer

An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 /spl Omega/ to very high values of approximately several k/spl Omega/ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal...

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Bibliographic Details
Main Authors: Subhani, K.F., DiBitonto, D., Pennington, T., Baier, S., Stronczer, J.
Format: Conference Proceeding
Language:English
Subjects:
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Description
Summary:An innovative design for a noninductive transformer circuit that transforms values of impedance less than 1 /spl Omega/ to very high values of approximately several k/spl Omega/ is based on GaAs CHIGFET technology, with intrinsic radiation hardness in excess of several hundred megarads. A principal advantage of the circuit is that the speed and bandwidth sensitivity is weakly affected by detector source capacity (up to 1 nF), thereby allowing greater design flexibility for both hadronic and electromagnetic calorimetry, or even charge particle detection (tracking) integrated within the same device. The simulated risetime is less than 2 ns, and power dissipated is less than 40 mW.
ISSN:0094-2898
2161-8135
DOI:10.1109/SSST.1993.522761