Fast, radiation-hard GaAs CHIGFET op amp

A fast, low-noise, operational amplifier is fabricated in an industrial GaAs technology, exhibiting intrinsic radiation hardness in excess of several hundred megarads. The circuit architecture is based on GaAs/AlGaAs CHIGFETs of 1-/spl mu/m channel length. The amplifier is fully monolithically integ...

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Bibliographic Details
Main Authors: Subhani, K.F., DiBitonto, D., Pennington, T., Baier, S., Stronczer, J.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Circuit noise
Gallium arsenide
Integrated circuit technology
Ionization
Low-frequency noise
Low-noise amplifiers
Operational amplifiers
Radiation detectors
Voltage
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Description
Summary:A fast, low-noise, operational amplifier is fabricated in an industrial GaAs technology, exhibiting intrinsic radiation hardness in excess of several hundred megarads. The circuit architecture is based on GaAs/AlGaAs CHIGFETs of 1-/spl mu/m channel length. The amplifier is fully monolithically integrated with low-frequency open-loop gain of 10/sup 5/, gain-bandwidth product of 1.5 GHz, DC input offset voltage of 20 mV, slew rate of 760 V//spl mu/s, and power requirements of 30 mW. Its output voltage is linear from -3 V to +3 V within 1% accuracy. A gain of 50 k/spl Omega/ is achieved for operation as a transimpedance amplifier with risetime
ISSN:0094-2898
2161-8135
DOI:10.1109/SSST.1993.522762