Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition

The ultra-thin HfO 2 /SiO 2 gate stack high-k dielectrics were deposited by atomic layer deposition. The physical and structural properties of the HfO 2 /SiO 2 films were investigated. Atomic force microscopy, transmission electron microscopy and X-ray reflectivity analysis results indicate that the...

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Bibliographic Details
Main Authors: Zhou Tao, Liu Hongxia, Kuang Qianwei, Cai Naiqiong, Hao Yue, Aaron, Z., Sai, T.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Atomic layer deposition
Atomic measurements
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Optical films
Reflectivity
Silicon
Transmission electron microscopy
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Summary:The ultra-thin HfO 2 /SiO 2 gate stack high-k dielectrics were deposited by atomic layer deposition. The physical and structural properties of the HfO 2 /SiO 2 films were investigated. Atomic force microscopy, transmission electron microscopy and X-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO 2 /SiO 2 gate stack dielectrics with good performance.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2009.5232575