Advanced block oxide MOSFETs for 25 nm technology node

This paper proposes two ultimate block oxide (BO) devices called MOS with BO (bMOS) and middle partial insulation with BO (bMPI), respectively. Both he fabrications of the two devices are simple and self-alignment, which help to attain low-cost mass production. The bMOS shows better thermal stabilit...

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Bibliographic Details
Main Authors: Chih-Hung Sun, Jyi-Tsong Lin, Yi-Chuen Eng, Tzu-Feng Chang, Po-Hiesh Lin, Hsuan-Hsu Chen, Chih-Hao Kuo, Hsien-Nan Chiu
Format: Conference Proceeding
Language:English
Subjects:
Etching
Fabrication
Insulation
Leakage current
Mass production
MOSFETs
Silicon
Sun
Temperature
Thermal stability
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Summary:This paper proposes two ultimate block oxide (BO) devices called MOS with BO (bMOS) and middle partial insulation with BO (bMPI), respectively. Both he fabrications of the two devices are simple and self-alignment, which help to attain low-cost mass production. The bMOS shows better thermal stability than the bMPI because of its multiple-tie scheme. Also the most conspicuous one is the lattice temperature; bMOS shows about 40% lower temperature compared with the bMPI. However, the bMPI can gain better short-channel behavior due to the BOX under its channel layer. In addition, although the drain on-state current of the bMPI is lower than that of the bMOS, the lower leakage current helps to gain a higher ION/IOFF ratio. It is a trade-off between performance and reliability. Additionally, if the fabrication cost is also considered, the bMOS will exhibit better advantage than the bMPI because of a bulk wafer being used for a starting substrate.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2009.5232673