Advanced block oxide MOSFETs for 25 nm technology node

• Main Authors: Chih-Hung Sun, Jyi-Tsong Lin, Yi-Chuen Eng, Tzu-Feng Chang, Po-Hiesh Lin, Hsuan-Hsu Chen, Chih-Hao Kuo, Hsien-Nan Chiu
• Format: Conference Proceeding
• Language: English
• Subjects: Etching; Fabrication; Insulation; Leakage current; Mass production; MOSFETs; Silicon; Sun; Temperature; Thermal stability
• ISSN: 1946-1542; 1946-1550
• DOI: 10.1109/IPFA.2009.5232673

This paper proposes two ultimate block oxide (BO) devices called MOS with BO (bMOS) and middle partial insulation with BO (bMPI), respectively. Both he fabrications of the two devices are simple and self-alignment, which help to attain low-cost mass production. The bMOS shows better thermal stability than the bMPI because of its multiple-tie scheme. Also the most conspicuous one is the lattice temperature; bMOS shows about 40% lower temperature compared with the bMPI. However, the bMPI can gain better short-channel behavior due to the BOX under its channel layer. In addition, although the drain on-state current of the bMPI is lower than that of the bMOS, the lower leakage current helps to gain a higher ION/IOFF ratio. It is a trade-off between performance and reliability. Additionally, if the fabrication cost is also considered, the bMOS will exhibit better advantage than the bMPI because of a bulk wafer being used for a starting substrate.