Optimization of the Multilayer Structures for a High Field-Sensitivity Biochip Sensor Based on the Planar Hall Effect

We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2009-10, Vol.45 (10), p.4518-4521
Main Authors: Hung, Tran Quang, Oh, Sunjong, Anandakumar, S., Jeong, Jong-Ryul, Kim, Dong-Yong, Kim, Cheol Gi
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Antiferromagnetic materials
Bias
Biochips
Biomagnetics
Biosensors
Hall effect
high-field sensitivity
Iron
Joining
Magnetic anisotropy
Magnetic materials
Magnetic sensors
Magnetism
Multilayers
Nonhomogeneous media
Optimization
planar Hall effect (PHE) sensor
Sensor phenomena and characterization
Sensors
Thin films
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Summary:We have investigated the planar Hall effect (PHE) in three multilayer structures such as a bilayer, a spin-valve and a weak exchange bias coupling bilayer structure introduced a very thin Cu spacer layer between the antiferromagnetic and ferromagnetic layers. These thin films are Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/Ta(3) (nm), and Ta(3)/NiFe(10)/Cu(0.2)/IrMn(10)/Ta(3) (nm), respectively. The active layers in all three structures were kept constant. The field-sensitivity of the fabricated PHE sensors obtained for the respected structures are about 1.6 muV middot Oe -1 , 5 muV middot Oe -1 , and 12 muV middot Oe -1 , respectively. The results suggest that the sensor based on a weak exchange bias coupling structure has the highest field-sensitivity compared with the others. The proposed weak exchange bias coupling structure emphasizes for the development of the PHE sensor materials.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2009.2023426