Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT

Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the swit...

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Bibliographic Details
Main Authors: Franke, W.-T., Fuchs, F.W.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar device
Bipolar transistors
Circuit testing
Diodes
IGBT
Insulated gate bipolar transistors
JFET
Power semiconductor device
Power semiconductor devices
Power semiconductor switches
SiC-device
Silicon carbide
Switching circuits
Temperature
Voltage
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Summary:Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence of the junction temperature on the power losses of the investigated devices. Therefore, 1200 V/6 A devices have been used. The BJT and JFET show some advantages concerning their total losses and their temperature range.