Application of the modern semiconductor devices based on the SIC

This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (silicon carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter wit...

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Bibliographic Details
Main Authors: Pavel, D., Miroslav, H.
Format: Conference Proceeding
Language:English
Subjects:
Electric vehicle
Frequency conversion
Hybrid power integration
Inverters
Power measurement
Power semiconductor device
Power semiconductor devices
Semiconductor devices
Semiconductor diodes
Silicon carbide
Topology
Traction application
Vehicles
Voltage
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Summary:This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (silicon carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free-wheeling SiC Shottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2 kVA.