Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application

In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si 3 N 4 ) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We...

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Bibliographic Details
Main Authors: Sahoo, K.C., Yiming Li, Chang, E.Y., Men-Ku Lin, Jin-Hua Huang
Format: Conference Proceeding
Language:English
Subjects:
Coatings
Etching
Fabrication
Gold
Materials science and technology
Optical surface waves
Photovoltaic cells
Reflectivity
Silicon
Surface texture
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Summary:In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si 3 N 4 ) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared with the measurement of fabricated samples. We compare the results of single and double-layer-antireflection (SLAR and DLAR) coatings with SWS on Si 3 N 4 , taking into account average residual reflectivity over a range of wavelengths, where the solar efficiency is further estimated. A low average residual reflectivity of 9.56% could be obtained for a Si 3 N 4 SWS height and nonetched layer of 140 nm and 60 nm respectively, which will be less than 80 nm Si3N4 SLAR (~15%) and almost the same as that of a DLAR with 60 nm Si 3 N 4 and 70 nm magnesium fluoride (~10%).
ISSN:1946-1569
DOI:10.1109/SISPAD.2009.5290233