Diodes with intervalley transfer on the basis of A3B5 nitride semiconductors

The frequency and power capabilities of Gunn diodes based upon nitride semiconductors A 3 B 5 including variband semiconductor are evaluated using two-temperature model of intervalley electron transfer (IET). Availability of nitride semiconductors in TED's is considered.

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Bibliographic Details
Main Authors: Storozhenko, I.P., Arkousha, Yu.V.
Format: Conference Proceeding
Language:English
Subjects:
Argon
Diodes
Gallium arsenide
Gallium nitride
Helium
Indium phosphide
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Summary:The frequency and power capabilities of Gunn diodes based upon nitride semiconductors A 3 B 5 including variband semiconductor are evaluated using two-temperature model of intervalley electron transfer (IET). Availability of nitride semiconductors in TED's is considered.