Gain and stability models for HBT grid amplifiers

A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and theory. The measured patterns show the evidence of...

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Bibliographic Details
Main Authors: Cheh-Ming Liu, Sovero, E.A., De Lisio, M.P., Moussessian, A., Rosenberg, J.J., Rutledge, D.B.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
Dielectric constant
Dielectric substrates
Heterojunction bipolar transistors
Inductors
Polarization
Power amplifiers
Space technology
Stability
Transmission lines
Online Access:Request full text
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Summary:A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and theory. The measured patterns show the evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based on the stability model, a lumped capacitor gives suitable phase shift of the circular function, thus stabilizing the grid. A second 18-element grid was fabricated, using this theory, with improved stability.
DOI:10.1109/APS.1995.530256