Effect of resistance of TSV's on performance of boost converter for low power 3D SSD with NAND flash memories

This paper investigates the effect of the TSV resistance (R TSV ) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When R TSV is 0 Omega, both the rising time (t rise ) from 0 V to 15 V and the energy during boosting (E loss ) of the output voltage (V OUT...

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Bibliographic Details
Main Authors: Yasufuku, T., Ishida, K., Miyamoto, S., Nakai, H., Takamiya, M., Sakurai, T., Takeuchi, K.
Format: Conference Proceeding
Language:English
Subjects:
Boosting
Charge measurement
Charge pumps
Circuits
Current measurement
Inductors
Parasitic capacitance
Random access memory
Through-silicon vias
Voltage
Online Access:Request full text
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Summary:This paper investigates the effect of the TSV resistance (R TSV ) on the performance of boost converters for Solid State Drive (SSD) using circuit simulation. When R TSV is 0 Omega, both the rising time (t rise ) from 0 V to 15 V and the energy during boosting (E loss ) of the output voltage (V OUT ) are 10.6% and 6.6% of the conventional charge pump respectively. In contrast, when R TSV is 200 Omega, for example, t rise is 30.1% and E loss is 22.8% of the conventional charge pump. Besides, V OUT cannot be boosted above 20 V when R TSV is larger than 210 Omega. Therefore, in order to maintain the advantages of the boost converter over the charge pump in terms of t rise and E loss , the reduction of R TSV is very important.
DOI:10.1109/3DIC.2009.5306594