Resonant gate drive for silicon integrated DC/DC converters

Many studies concern high-switching frequency, monolithic DC/DC converters in the 1-W range for battery-powered handsets (up to 5 V-input voltage). The major limitation in the design of hard-switching, high-frequency DC/DC SMPSs comes from the increased switching losses in the 100 MHz range of switc...

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Bibliographic Details
Main Authors: Bathily, M., Allard, B., Verdier, J., Hasbani, F.
Format: Conference Proceeding
Language:English
Subjects:
DC-DC power converters
DC/DC converter
Frequency conversion
Resonance
Resonant gate driver
Robustness
Silicon
SMPS
Switched-mode power supply
Switching frequency
Switching loss
Telephone sets
Voltage
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Description
Summary:Many studies concern high-switching frequency, monolithic DC/DC converters in the 1-W range for battery-powered handsets (up to 5 V-input voltage). The major limitation in the design of hard-switching, high-frequency DC/DC SMPSs comes from the increased switching losses in the 100 MHz range of switching frequency. The contribution of a robust resonant gate driver is considered for the reduction of the power MOSFET gate switching losses for a 200 MHz switching frequency SMPS. Simulation results show a reasonable reduction of 20 to 30% in switching losses with respect to a standard optimized gate driver and for an acceptable silicon area impact. The SMPS power losses could be reduced by 5% with an acceptable impact on silicon area. A prototype has been designed in 0.25-mum BiCMOS technology.
ISSN:2329-3721
2329-3748
DOI:10.1109/ECCE.2009.5316115