Ion distribution functions in an inductively coupled plasma

Summary form only given, as follows. In developing plasma processes, it is important to understand the effect of different process parameters on the distribution functions of ions which are incident on a wafer surface. In this work, two dimensional ion distribution functions are calculated using a k...

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Bibliographic Details
Main Authors: Keiter, E.R., Hitchon, W.N.G., Kolobov, V.I., Kramer, K.M.
Format: Conference Proceeding
Language:English
Subjects:
Distribution functions
Integrated circuit modeling
Ion implantation
Kinetic theory
Object oriented databases
Object oriented modeling
Physics
Plasma immersion ion implantation
Plasma measurements
Plasma sources
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Description
Summary:Summary form only given, as follows. In developing plasma processes, it is important to understand the effect of different process parameters on the distribution functions of ions which are incident on a wafer surface. In this work, two dimensional ion distribution functions are calculated using a kinetic model based on the method described in Hitchon et al. (1989). For lower pressure regimes, fluid techniques become inadequate for tracking ions, making a kinetic technique necessary. This kinetic module is but one component of a multimodule hybrid, which also includes modules for calculating electric fields, the electrostatic potential, and the electron energy distribution function (EEDF). The EEDF calculation is based on a non-local approach. A comparison of ion distributions, and how they vary with process parameters such as system geometry, pressure, and coil placement will be presented.
ISSN:0730-9244
2576-7208
DOI:10.1109/PLASMA.1995.531728