SOI substrate readiness for 22/20 nm and for fully depleted planar device architectures

Fully depleted (FD) MOSFET architecture for sub-32 nm technology node requires a new SOI substrate fabrication to meet all the stringent specifications imposed by a FD device. Ultra thin SOI (UTSOI) targets planar device architectures, stressing specifications for thickness uniformity. Also ultra th...

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Bibliographic Details
Main Authors: Delprat, D., Boedt, F., David, C., Reynaud, P., Alami-Idrissi, A., Landru, D., Girard, C., Maleville, C.
Format: Conference Proceeding
Language:English
Subjects:
Fabrication
Manufacturing
Microprocessors
MOSFET circuits
Production
Silicon
Stability
Substrates
Thickness control
Threshold voltage
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Summary:Fully depleted (FD) MOSFET architecture for sub-32 nm technology node requires a new SOI substrate fabrication to meet all the stringent specifications imposed by a FD device. Ultra thin SOI (UTSOI) targets planar device architectures, stressing specifications for thickness uniformity. Also ultra thin burried oxyde (UTBOx) offers additional benefits such as the application of back bias, for example enhancing device stability or threshold voltage tuning. In this paper, we discuss the Smart Cuttrade technology capability for both UTSOI and UTBOx substrate design with the quality and specifications that meet the future FD technology requirements.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2009.5318744