Demonstration of low temperature CMOS devices on SiOG and SOI substrates

The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (< 600degC) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fa...

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Bibliographic Details
Main Authors: Williams, C.K., Couillard, J.G., Senawiratne, J., Manley, R.G., Meller, P.M., Shea, C.G., McCabe, A.M., Hirschman, K.D.
Format: Conference Proceeding
Language:English
Subjects:
CMOS process
CMOS technology
Dielectric substrates
Etching
Fabrication
Glass
Implants
Silicon
Temperature
Thin film transistors
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Description
Summary:The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (< 600degC) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fabricated on SOI (SIMOX) with respect to carrier mobility and off-state leakage current. SiOG is viewed as a platform with potential applications in advanced flat panel mobile display modules as well as low-cost, medium performance ASICs.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2009.5318791