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Demonstration of low temperature CMOS devices on SiOG and SOI substrates
The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (< 600degC) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fa...
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| creator | Williams, C.K. Couillard, J.G. Senawiratne, J. Manley, R.G. Meller, P.M. Shea, C.G. McCabe, A.M. Hirschman, K.D. |
| description | The fabrication and analysis of CMOS devices fabricated on Silicon-on-Glass (SiOG) and compared to SOI (SIMOX) substrates are presented. Key aspects of the low temperature (< 600degC) fabrication process are described. The devices from the SiOG substrate were observed to be comparable to those fabricated on SOI (SIMOX) with respect to carrier mobility and off-state leakage current. SiOG is viewed as a platform with potential applications in advanced flat panel mobile display modules as well as low-cost, medium performance ASICs. |
| doi_str_mv | 10.1109/SOI.2009.5318791 |
| format | conference_proceeding |
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| identifier | ISSN: 1078-621X |
| ispartof | 2009 IEEE International SOI Conference, 2009, p.1-2 |
| issn | 1078-621X 2577-2295 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS process CMOS technology Dielectric substrates Etching Fabrication Glass Implants Silicon Temperature Thin film transistors |
| title | Demonstration of low temperature CMOS devices on SiOG and SOI substrates |
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