Investigation of the details of silicon nanowhisker growth by Monte Carlo simulation

Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R 2 for diffusion growth mode and radius independent for adsorption mode.

Saved in:
Bibliographic Details
Main Authors: Nastovjak, A.G., Neizvestny, I.G., Shwartz, N.L.
Format: Conference Proceeding
Language:English
Subjects:
Crystallization
Crystals
Gold
Mechanical factors
Molecular beam epitaxial growth
Monte Carlo
Monte Carlo methods
Nanobioscience
Nanowhisker
Seminars
Silicon
simulation
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R 2 for diffusion growth mode and radius independent for adsorption mode.
DOI:10.1109/INTERNANO.2009.5335639