Reactive ion etching for patterning high aspect ratio and nanoscale features

This paper presents the authors' understanding of the mechanistic aspects of the role of energetic ion bombardment in low density plasma reactive ion etching (RIE). The phenomenon of ion assisted gas surface chemistry is described and the importance of this phenomenon in obtaining anisotropic i...

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Bibliographic Details
Main Authors: Avram, M., Avram, A., Comanescu, F., Popescu, A.M., Voitincu, C.
Format: Conference Proceeding
Language:English
Subjects:
Anisotropic magnetoresistance
Chemicals
Dry etching
Hafnium
Hydrogen
Inductors
nanoscale patterning
Plasma accelerators
Plasma applications
Plasma chemistry
Radio frequency
reactive ion etching
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Summary:This paper presents the authors' understanding of the mechanistic aspects of the role of energetic ion bombardment in low density plasma reactive ion etching (RIE). The phenomenon of ion assisted gas surface chemistry is described and the importance of this phenomenon in obtaining anisotropic is emphasized. It was studied the dependence of etching rate of RF power and pressure in reactor. RF power and pressure in the reactor has significant effect not only on the etching rate, but also on the degree of anisotropy and etching profiles for various RF power and pressure in the reactor.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2009.5336554