Noise-Margin Analysis for Organic Thin-Film Complementary Technology

Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor param...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-01, Vol.57 (1), p.201-208
Main Authors: Bode, D., Rolin, C., Schols, S., Debucquoy, M., Steudel, S., Gelinck, G.H., Genoe, J., Heremans, P.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Complementary circuits
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Inverters
Logic gates
Mathematical model
n-type organic thin-film transistor (n-type OTFT)
Noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
Voltage measurement
yield estimation
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Summary:Parameter variation in organic thin-film transistor (OTFT) technology is known to limit the yield of digital circuits. It is expected that complementary OTFT technology (C-TFT) will reduce the sensitivity to parameter variations. In this paper, we quantify the dependence of yield on transistor parameter variations for C-TFT and compare it to unipolar logic. First, a basic inverter model is developed and fitted to measured transfer characteristics of organic complementary inverters. Next, the inverter model is used in numerical simulations to determine how the noise margin of the inverter, a measure for its reliable operation, changes as a function of transistor parameter variations. The noise margin is significantly improved with respect to p-type-only inverters with similar parameters. Finally, we perform circuit-level yield predictions as a function of parameter spread using the noise-margin simulations performed earlier.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2035546