Simulation of Radiation Damage Effects on Planar Pixel Guard Ring Structure for ATLAS Inner Detector Upgrade

We use ac and dc technology computer assisted design simulations to study the effects of radiation damage in the planar pixel sensors of the ATLAS inner detector upgrade, in particular on the active area and breakdown protection of different multiguard rings structure. Using a model of defect introd...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3236-3243
Main Authors: Benoit, M., Lounis, A., Dinu, N.
Format: Article
Language:English
Subjects:
Breakdown
Computational modeling
Computer simulation
Detectors
Electric breakdown
Electric potential
Guards
Large Hadron Collider
Particle beams
Particle measurements
Pixels
Planar pixel sensors
Protection
Radiation damage
Radiation detectors
Ring structures
Sensor phenomena and characterization
silicon
Silicon radiation detectors
TCAD radiation damage simulation
Technology Computer Assisted Design (TCAD)
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Summary:We use ac and dc technology computer assisted design simulations to study the effects of radiation damage in the planar pixel sensors of the ATLAS inner detector upgrade, in particular on the active area and breakdown protection of different multiguard rings structure. Using a model of defect introduction into silicon band gap that agrees well with simulation up to fluences of 10 15 n eq /cm 2 , we simulated how high radiation damage phenomena like space-charge sign inversion and double-junction formation affects the efficiency of different models of multiguard ring structures in n-type and p-type bulk. Depletion potential, potential distribution on guard rings, breakdown voltage, and leakage current were extracted from simulations to compare the behavior of the different models.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2034002